深圳市木兴高科电子有限公司

S9014 SOT-23 50V 100mA 丝印:J6 S9015功能互补。无铅的HFE线性。功耗。(PC = 0.2 w)应用前置放大器低水平和低噪声。

S9015 SOT-23 -50V -100mA 丝印:M6 S9014功能互补。无铅的HFE线性。功耗。(PC = 0.2 w)应用低频率、低噪声放大器。

S9014

参数测试条件TYP象征单位

集电极-基极击穿电压100 V(BR)CBO IC =μa,IE = 0 50 V

Collector-emitter击穿电压V(BR) IC = 0.1 ma,IB 45 V = 0 B

发射极基极击穿电压-100 V(BR)EBO IE =μa,IC 5 V = 0

收集器截止电流断路器= 50 v,0.1μA IE = 0

收集器截止电流VCE = 35 v,IBμA 0.1 B = 0

发射器截止电流IEBO VEB = 3 v,0.1μA IC = 0

直流电流增益hFE VCE = 5 v,IC马=0

饱和电压VCE(坐)IC = 100 ma,IB马= 5 B 0.3 V

基极发射极电压饱和VBE(坐)IC = 100 ma,IB马= 5 B 1 V

VCE = 6 v,IC = 20 ma

f = 30 MHz 150 MHz

参数测试条件TYP象征单位

集电极-基极击穿电压-100 V(BR)CBO IC =μa,IE = 0 -50 V

Collector-emitter击穿电压V(BR)IC = -0.1 ma,IB = 0 B -45 V

发射极基极击穿电压-100 V(BR)EBO IE =μa,IC 5 V = 0

收集器截止电流断路器= -50 v,-0.1μA IE = 0

发射器截止电流IEBO VEB = 5 v,-0.1μA IC = 0

直流电流增益hFE VCE = 5 v,IC马=0

饱和电压VCE(坐)IC = -100 ma,IB马= - 10 B -0.3 V

基极发射极电压饱和VBE(坐)IC = -100 ma,IB B = -10 ma 1 V

VCE = 5 v,IC = -10 ma

f = 30 MHz MHz